The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation voltage and suitable for general purpose linear and switching applications.
Collector to emitter voltage (Vce) is 100V
Collector current (Ic) is 25A
Power dissipation (Pd) is 125W
Collector to emitter saturation voltage of 4V at 25A collector current
DC current gain (hFE) of 10 at 15A collector current
Operating junction temperature range from 150°C
Power Management, Consumer Electronics, Portable Devices, Industrial
Bipolar Transistors – BJT
– 65 C
+ 150 C
BJTs – Bipolar Transistors
For data sheet search:- TIP36C
These genuine vintage ST Microelectronics parts came to us as part of a lot of surplus stock from a large ‘Milspec’ type Co.
Having been in storage for some time we have classified them as ‘new other’.