Description
WE ARE RICH ELECTRONICS
WE PURCHASE AND RECYCLE
SURPLUS ELECTRONIC
COMPONENTS AND EQUIPMENT!
For sale here we have the above…
10 Pieces on surface mount tape.
The photo in the title shows our actual stock (a part reel, originally of 3000)
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors
(FAIRCHILD is now part of ON Semi)
They offer a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
These MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 220 mA |
Maximum Drain Source Voltage | 25 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 4 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.7V |
Maximum Power Dissipation | 350 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +8 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 0.49 nC @ 4.5 V |
Height | 0.93mm |
Maximum Operating Temperature | +150 °C |
Width | 1.3mm |
Length | 2.92mm |
Minimum Operating Temperature | -55 °C |
Mfr Package Description SOT-23, 3 PIN
Lead Free Yes EU RoHS Compliant China RoHS Compliant
Terminal Form GULL WING
Terminal Finish MATTE TIN
Terminal Position DUAL
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1 Transistor
Application SWITCHING Transistor
Element Material SILICON
Power Dissipation Ambient-Max 0.3500 W
Channel Type N-CHANNEL FET
Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT
Transistor Type GENERAL PURPOSE SMALL SIGNAL
Drain Current-Max (ID)0.2200 ADS
Breakdown Voltage-Min 25 V
Drain-source On Resistance-Max 5 ohm
For data sheet search…FDV301N
Or go directly to…
http://www.datasheets360.com/pdf/8890299945276282929
- PLEASE NOTE!These parts came to us as part of a lot of surplus stock from a large ‘Mispec’ type Co. and have been kept in storage for some time, we have therefore classified them as ‘new other’, they are however pristine, stored with us sealed in original packaging, the photographs are representative of their general condition, being of some of our actual stock, and, as with all our products they come with a full guarantee.
If you have similar items to this, or indeed any electronic components that are surplus to requirements please contact us with details.