Fairchild FDV301N Digital N/Ch FET Transistor 220MA 25V SOT23 10 Pieces OM0175

£8.00

39 in stock

SKU: OM0175 Category:

Description

WE ARE RICH ELECTRONICS

PURCHASERS AND RECYCLERS

OF SURPLUS ELECTRONIC

COMPONENTS AND EQUIPMENT!

For sale here we have the above parts…

10 pieces on surface mount tape.

The photo in the title shows our actual stock (a part reel, originally of 3000)

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

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MOSFET Transistors

(FAIRCHILD is now part of ON Semi)

They offer a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
These MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Channel Type N
Maximum Continuous Drain Current 220 mA
Maximum Drain Source Voltage 25 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 4 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.7V
Maximum Power Dissipation 350 mW
Transistor Configuration Single
Maximum Gate Source Voltage +8 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V
Height 0.93mm
Maximum Operating Temperature +150 °C
Width 1.3mm
Length 2.92mm
Minimum Operating Temperature -55 °C

Mfr Package Description SOT-23, 3 PIN

Lead Free Yes EU RoHS Compliant China RoHS Compliant

Terminal Form GULL WING

Terminal Finish MATTE TIN

Terminal Position DUAL

Number of Terminals 3

Package Body Material PLASTIC/EPOXY

Configuration SINGLE WITH BUILT-IN DIODE

Number of Elements 1 Transistor

Application SWITCHING Transistor

Element Material SILICON

Power Dissipation Ambient-Max 0.3500 W

Channel Type N-CHANNEL FET

Technology METAL-OXIDE SEMICONDUCTOR

Operating Mode ENHANCEMENT

Transistor Type GENERAL PURPOSE SMALL SIGNAL

Drain Current-Max (ID)0.2200 ADS

Breakdown Voltage-Min 25 V

Drain-source On Resistance-Max 5 ohm

For data sheet copy and paste:-   http://www.datasheets360.com/pdf/8890299945276282929

These parts came to us as part of a lot of surplus stock from a large Milspec type Co. and have been kept in storage for some time, we have therefore classified them as ‘new other’. They are however in pristine condition still in their original packaging and ‘as new’ in all respects, the photographs are representative of their excellent condition, and, as with all our products they come with a full guarantee. 

PLEASE NOTE!

If you have similar items to this, or indeed any electronic components that are surplus to requirements please contact us with details.

Additional information

Brand

MPN