Description
Specifications
MOSFET | ||
Si | ||
SMD/SMT | ||
SO-8 | ||
P-Channel | ||
2 Channel | ||
55 V | ||
3.4 A | ||
– 20 V, + 20 V | ||
25.3 nC | ||
2 W | ||
Configuration: | Dual | |
Height: | 1.75 mm | |
Length: | 4.9 mm | |
Transistor Type: | 2 P-Channel | |
Width: | 3.9 mm | |
Brand: | Infineon / IR | |
Product Type: | MOSFET | |
Subcategory: | MOSFETs | |
Unit Weight: | 540 mg |
Description
These HEXFET® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET’s are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space.
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Tubed
Dynamic dv/dt Rating
Fast Switching
https://www.infineon.com/dgdl/Infineon-IRF7342-DS-v01_01-EN.pdf?fileId=5546d462533600a4015355f665771b69