Description
1 Piece
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Dist. = 4.8 mm
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of paralleling
DESCRIPTION
Third generation Power MOSFETs from IR provide the
designer with the best combination of fast switching,
rugged device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.Genuine International Rectifier parts!
Type Designator: IRLI530G
Type of Transistor: MOSFET
Maximum Power Dissipation (Pd): 42W
Maximum Drain-Source Voltage |Vds|: 100V
Gate to Source Voltage |Vgs|: +-10V
Current – Continuous Drain (Id) 25’C @ 5V: 9.7A
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Maximum Junction Temperature (Tj): 150°C
These came to us as part of a lot of surplus stock from a large ‘Milspec’ type Co. and have been kept in storage for some years, (pack dated 2003) we have therefore classified them as ‘new other’. They are however in the same condition as the day they were made – still in original tubes, see photographs.
For datasheet simply search… IRLI530G
