Polyfet F2001 RF Power VDMOS Transistor HF 2.5W 28V 1000MHz MBD002G

£30.00

2 in stock

SKU: MBD002G Categories: ,

Description

1 Piece

Part name F2001
Description Patented Gold Metalised Silicon Gate Enhancement Mode Rf Power Vdmos Transistor
Functional VDMOS
Manufacturer Polyfet RF Devices
Type: – DMOS N Channel enhancement mode MOSFET
Id: – Continuous Drain Current: 0.8 A
Vds: – Drain-Source Breakdown Voltage: 65 V
Gain: – 10 dB
Output Power: – 2.5W

General Description
Silicon VDMOS transistor designed specifically for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

Polyfet” process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance

PATENTED GOLD METALISED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
2.5Watts Single Ended

HF 2.5W 28V 1000MHz
Package Style AP
HIGH EFFICIENCY, LINEAR

Genuine Polyfet parts these came to us as part of a lot of surplus stock from a large ‘Milspec’ type Co. As they have been in storage for some years (date coded 205JJ), we have classified them as ‘new other’ – though they are in good serviceable condition.

For full datasheet search:- Polyfet F2001

 

 

Additional information

Brand

MPN