|Description||Patented Gold Metalised Silicon Gate Enhancement Mode Rf Power Vdmos Transistor|
|Manufacturer||Polyfet RF Devices|
Vds: – Drain-Source Breakdown Voltage: 65 V
Gain: – 10 dB
Silicon VDMOS transistor designed specifically for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
“Polyfet” process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
PATENTED GOLD METALISED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
2.5Watts Single Ended
HF 2.5W 28V 1000MHz
Package Style AP
HIGH EFFICIENCY, LINEAR
Genuine Polyfet parts these came to us as part of a lot of surplus stock from a large ‘Milspec’ type Co. As they have been in storage for some years (date coded 205JJ), we have classified them as ‘new other’ – though they are in good serviceable condition.
For full datasheet search:- Polyfet F2001