Fairchild BSS138NL MOSFET N Channel Logic Level Field Effect Transistor OM0183i


SKU: OM0183i Category:


Select 10, 20, 40 or 100 Pieces 

From drop down box above, the more you buy the greater the discount

 Image result for sot-23 image

Product Information

1 Channel
50 V
220 mA   
3.5 Ohms
20 V
– 55 C
+ 150 C
360 mW
Configuration:  Single
Packaging:  Reel
1.2 mm
Length:  2.9 mm
1.3 mm
Product:    MOSFET Small Signal
Series:  BSS138
1 N-Channel
Brand:  Fairchild
Fall Time:  9 ns
Rise Time:  9 ns
Typical Turn-Off Delay Time:  20 ns
5 ns
1.438 g
No. of Pins:  3

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimise on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.

• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V

                        RDS(ON) = 6.0Ω @ VGS = 4.5 V

• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount

These genuine Fairchild parts came to us as part of a lot of surplus stock

Originating from a large ‘Milspec’ type Co. they have been in storage for a time, dated 0718

We have therefore classified them as ‘new other’ however, they are still on the original Fairchild reel

and in the same condition as the day they were manufactured

SOT−23 Taped and reeled

You will receive a cut length of tape containing the quantity ordered

At time of listing 3000 Pieces on Reel

 As many of our lines come in to us as surplus – sometimes from high end ‘Milspec’ type manufacturers we try to pass on our savings to our customers – often selling industrial grade or military spec components rather than the commercial equivalent. 


Additional information



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