Description
IRF740C
MANUFACTURER Magnatec
MARKETED BY RS – NOW DISCONTINUED!
RS no. 299-648
1 Piece
GENERAL DESCRIPTION/FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode - Diode is Characterised for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
| Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 400 V |
| Maximum Drain Source Resistance | 550 mΩ |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 125 W |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Height | 8.76mm |
| Length | 10.54mm |
- THESE CAME TO US AS PART OF A “JOB LOT” OF SURPLUS STOCK FROM A LARGE MILSPEC TYPE CO. THEY ARE GENUINE MAGNATEC PARTS STORED WITH US STILL SEALED IN IN ORIGINAL BAGS DATE CODED 625, AS SUCH WE HAVE CLASSIFIED THEM AS NEW OTHER
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