Description
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For sale here we have the above…
1 Piece
BFX37 PNP silicon planar epitaxial transistor housed in a hermetically sealed TO-18 metal can package. It is primarily designed for low-level, low-noise amplifier applications.
Marked BFX37 G950 an AI search gleaned the following…
BFX37 transistor marked G950 was manufactured by Mullard / Philips at their production facility in Southampton, Great Britain, during the 50th week of either 1969 or 1979.
Marking Code Breakdown
Vintage European semiconductors (especially those under the Pro-Electron naming system like “BFX”) used a standardized factory and date code stamped on the metal can:
- “G” (The Factory Code): In the Philips/Mullard manufacturing system, the letter G signifies the Southampton, UK semiconductor plant. Mullard was a prominent British subsidiary of Philips, and this factory produced a large volume of metal-can transistors.
- “950” (The Date Code): This follows a standard 3-digit date format (
YWW):- 9 represents the last digit of the year (either 1969 or 1979, as the BFX37 was a popular low-noise PNP silicon planar transistor actively designed and utilized throughout the late 1960s and 1970s).
- 50 represents the 50th week of that year (mid-December).
Features
- Type: PNP Bipolar Junction Transistor (BJT)
- Collector-Emitter Voltage (\(V_{CEO}\)): 80V
- Power Dissipation (\(P_{c}\)): ~0.3W to 0.36W
- Transition Frequency (\(f_{t}\)): 40 MHz
- Common Applications: Low-noise, low-level signal amplification
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Full Product Specifications
Type Transistor Silicon PNP Case TO18 Manufacturer Unmarked Vbr CEO 80 Max. PD (W) 360m hfe 230= Ic Max. (A) 100m Icbo Max. @Vcb Max. (A) 10n Polarity PNP Trans. Freq (Hz) Min. 40M @VCE (test) (V) 70 Oper. Temp (°C) Max. 175 Pinout Equivalence Number 3-12 Surface Mounted Yes/No NO Maximum Collector Power Dissipation (Pc) 0.3 W Maximum Collector-Base Voltage |Vcb| 60 V Maximum Collector-Emitter Voltage |Vce| 60 V Maximum Emitter-Base Voltage |Veb| 6 V Maximum Collector Current |Ic max| 0.05 A Max. Operating Junction Temperature (Tj) 200 °C Transition Frequency (ft): 40 MHz Forward Current Transfer Ratio (hFE), MIN 70 SKU 116806
Pinout (TO-18 Bottom View)
- Emitter
- Base
- Collector
These are unmarked as to manufacturer for generic datasheet search…BFX37
Or go directly to…
https://www.alldatasheet.com/datasheet-pdf/view/619456/NJSEMI/BFX37.html
PLEASE NOTE!
- These parts came to us as part of a lot of surplus stock from a large ‘Milspec’ type Co. and have been kept in storage for some time, we have therefore classified them as ‘new other’. They are however in good serviceable condition, and, as with all our products they come with a full guarantee.
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If you have similar items to this, or indeed any electronic components that are surplus to requirements please contact us with details.
