Siliconix IRF520 Low Gate Charge Power Mosfet OM0070

£3.00

100 in stock

SKU: OM0070 Category:

Description

Siliconix IRF520
Genuine Siliconix!

DESCRIPTION

 FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Status of the component Obsolete
Type FET N-channel
technology MOSFET (metal oxide)
Drain-source voltage (Vdss) 100V
Current – Continuous drain (Id) at 25 ° C 9.2 A (Tc)
Drive voltage (max Rds (On), min Rds (On)) 10 V
Rds on (max.) @ Id, Vgs @ 25 ° C 270mOhm at 5.5A, 10V
Vgs (th) (max.) At id 4 V at 250 μA
Gate charge (Qg) (Max) at Vgs 16nC @ 10V
Vgs (max.) ± 20V
Input capacitance (Ciss) (Max) at Vds 360pF @ 25V
FET Feature
Power loss (max.) 60 W (Tc)
operating temperatur -55 ° C to 175 ° C (TJ)
mounting type via
Housing type from the supplier TO-220AB
Housing / Case TO-220-3


DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedised device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry

For datasheet copy and paste:- https://www.vishay.com/docs/91017/91017.pdf

They will reach you carefully packed still tubed or for smaller quantities in anti static bags.


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