Description
Siliconix IRF520
Genuine Siliconix!
DESCRIPTION
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
| Status of the component | Obsolete | |
|---|---|---|
| Type FET | N-channel | |
| technology | MOSFET (metal oxide) | |
| Drain-source voltage (Vdss) | 100V | |
| Current – Continuous drain (Id) at 25 ° C | 9.2 A (Tc) | |
| Drive voltage (max Rds (On), min Rds (On)) | 10 V | |
| Rds on (max.) @ Id, Vgs @ 25 ° C | 270mOhm at 5.5A, 10V | |
| Vgs (th) (max.) At id | 4 V at 250 μA | |
| Gate charge (Qg) (Max) at Vgs | 16nC @ 10V | |
| Vgs (max.) | ± 20V | |
| Input capacitance (Ciss) (Max) at Vds | 360pF @ 25V | |
| FET Feature | – | |
| Power loss (max.) | 60 W (Tc) | |
| operating temperatur | -55 ° C to 175 ° C (TJ) | |
| mounting type | via | |
| Housing type from the supplier | TO-220AB | |
| Housing / Case | TO-220-3 |
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedised device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry
For datasheet copy and paste:- https://www.vishay.com/docs/91017/91017.pdf
They will reach you carefully packed still tubed or for smaller quantities in anti static bags.
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