Toshiba 2SC2668 Y Silicon NPN Epitaxial Planar Transistor OM0012A

Description

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For sale here we have the above…

1 Piece

Type no. 2SC2668 Y

Please note these come in 3 versions these are the highest gain version, denoted by the ‘Y’ suffix.

Toshiba also make lower gain versions denoted by an ‘R’ or ‘O’ suffix.

TOSHIBA Transistor Silicon NPN Epoxy Epitaxial Planar Type (PCT process)

Brand New Genuine Toshiba Transistor.

High Frequency FM, RF, IF Amplifier Applications
Similar to the ECG229
Vcbo= 40v; Ic= 20 mA; Pw= 100 mW; ft= 550 MHz
Package TO-92

25-VOLT 40-AMP SILICON NPN WIDE BAND TRANSISTOR 1.0-WATT

Used in RF and Osc applications

Type	Transistor Silicon NPN
Manufacturer	Toshiba
Case	TO92
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	100m
Derate (Amb) (W/°C)	1.0m
hfe	40
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
Trans. Freq (Hz) Min.	550M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	125
@Ic (A)	1.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage |Vcb|	40 V
Maximum Collector-Emitter Voltage |Vce|	30 V
Maximum Emitter-Base Voltage |Veb|	4 V
Maximum Collector Current |Ic max|	0.02 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	550 MHz
Forward Current Transfer Ratio (hFE), MIN	40

Taped as per photograph

For datasheet search…2SC2668

OR GO DIRECTLY TO…

http://www.futurlec.com/Transistors/2SC2668.shtml

PLEASE NOTE!

These parts came to us as part of a lot of surplus stock from a large ‘Milspec’ Co. and have been kept in storage for a time, they are however pristine, stored with us sealed in original packaging and in good serviceable condition, the photographs are representative of their general appearance, being of some of our actual stock, and, as with all our products they come with a full guarantee.